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this is information on a product in full production. september 2014 docid16556 rev 2 1/12 stf6n62k3(045y) n-channel 620 v, 1.1 typ., 5.5 a mdmesh? k3 power mosfet in a to-220fp narrow leads package datasheet - production data figure 1. internal schematic diagram features ? 100% avalanche tested ? extremely high dv/dt capability ? gate charge minimized ? very low intrinsic capacitance ? improved diode reverse recovery characteristics ? zener-protected applications ? switching applications description this mdmesh? k3 power mosfet is the result of improvements applied to supermesh? technology, combined with an optimized vertical structure. this device boasts extremely low on- resistance, superior dynamic performance and high avalanche capability, rendering it suitable for the most demanding applications. to-220fp narrow leads 1 2 3 d(2) g(1) s(3) am01476v1 order code v ds r ds(on) max. i d p tot stf6n62k3(045y) 620 v 1.28 5.5 a 25 w table 1. device summary order code marking packages packaging stf6n62k3(045y) 6n62k3 to-220fp narrow leads tube www.st.com
contents stf6n62k3(045y) 2/12 docid16556 rev 2 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
docid16556 rev 2 3/12 stf6n62k3(045y) electrical ratings 12 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage 620 v v gs gate- source voltage 30 v i d drain current (continuous) at t c = 25 c 5.5 (1) 1. limited by package a i d drain current (continuous) at t c = 100 c 3.5 (1) a i dm (2) 2. pulse width limited by safe operating area drain current (pulsed) 22 (1) a p tot total dissipation at t c = 25 c 25 w esd gate-source human body model (c = 100 pf, r = 1.5 k ) 2500 v dv/dt (3) 3. i sd 5.5 a, di/dt 200 a/s, v dd = 80% v (br)dss peak diode recovery voltage slope 9 v/ns v iso insulation withstand voltage (rms) from all three leads to external heat sink (t = 1 s; t c = 25 c) 2500 v t stg storage temperature -55 to 150 c t j max. operating junction temperature 150 c table 3. thermal data symbol parameter value unit r thj-case thermal resistance junction-case max 5 c/w r thj-amb thermal resistance junction-ambient max 62.5 c/w table 4. avalanche characteristics symbol parameter max value unit i ar avalanche current, repetitive or not- repetitive (pulse width limited by t j max) 5.5 a e as single pulse avalanche energy (starting t j = 25c, i d = i ar , v dd = 50v) 140 mj
electrical characteristics stf6n62k3(045y) 4/12 docid16556 rev 2 2 electrical characteristics (t c = 25 c unless otherwise specified) table 5. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage (v gs = 0) i d = 1 ma 620 v i dss zero gate voltage drain current (v gs = 0) v ds = 620 v 1 a v ds = 620 v, t c =125 c 50 a i gss gate-body leakage current (v ds = 0) v gs = 20 v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 50 a 3 3.75 4.5 v r ds(on static drain-source on resistance v gs = 10 v, i d = 2.8 a 1.1 1.28 table 6. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds = 50 v, f = 1 mhz, v gs = 0 -706-pf c oss output capacitance - 66 - pf c rss reverse transfer capacitance -8.4-pf c oss eq (1) 1. c oss eq . is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss equivalent output capacitance v gs = 0, v ds = 0 to 496 v - 60 - pf r g intrinsic gate resistance f = 1 mhz open drain - 4 - q g total gate charge v dd = 496 v, i d = 5.5 a, v gs = 10 v (see figure 15 ) - 25.7 - nc q gs gate-source charge - 4.6 - nc q gd gate-drain charge - 14.4 - nc
docid16556 rev 2 5/12 stf6n62k3(045y) electrical characteristics 12 the built-in back-to-back zener diodes have been specifically designed to enhance not only the device?s esd capability, but also to make them capable of safely absorbing any voltage transients that may occasionally be applied from gate to source. in this respect, the zener voltage is appropriate to achieve efficient and cost-effective protection of device integrity. the integrated zener diodes thus eliminate the need for external components. table 7. switching times symbol parameter test conditions min. typ. max unit t d(on) turn-on delay time v dd = 310 v, i d = 2.75 a, r g = 4.7 , v gs = 10 v (see figure 14 ) -13-ns t r rise time - 12.5 - ns t d(off) turn-off-delay time - 27 - ns t f fall time - 19 - ns table 8. source drain diode symbol parameter test conditions min. typ. max. unit i sd source-drain current - 5.5 a i sdm (1) 1. pulse width limited by safe operating area source-drain current (pulsed) - 22 a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 5.5 a, v gs = 0 - 1.6 v t rr reverse recovery time i sd = 5.5 a, di/dt = 100 a/s v dd = 30 v (see figure 19 ) -190 ns q rr reverse recovery charge - 970 nc i rrm reverse recovery current - 10.5 a t rr reverse recovery time i sd = 5.5 a, di/dt = 100 a/s v dd = 30 v, t j = 150 c (see figure 19 ) -255 ns q rr reverse recovery charge - 1520 nc i rrm reverse recovery current - 12 a table 9. gate-source zener diode symbol parameter test conditions min typ. max. unit v (br)gso gate-source breakdown voltage i gs = 1ma, i d =0 30 - - v
electrical characteristics stf6n62k3(045y) 6/12 docid16556 rev 2 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. normalized v (br)dss vs temperature figure 7. static drain-source on-resistance v (br)dss
docid16556 rev 2 7/12 stf6n62k3(045y) electrical characteristics 12 figure 8. gate charge vs gate-source voltage figure 9. capacitance variations figure 10. normalized gate threshold voltage vs temperature figure 11. normalized on-resistance vs temperature figure 12. source-drain diode forward characteristics figure 13. maximum avalanche energy vs temperature
test circuits stf6n62k3(045y) 8/12 docid16556 rev 2 3 test circuits figure 14. switching times test circuit for resistive load figure 15. gate charge test circuit figure 16. test circuit for inductive load switching and diode recovery times figure 17. unclamped inductive load test circuit figure 18. unclamped inductive waveform figure 19. switching time waveform am01468v1 v gs p w v d r g r l d.u.t. 2200 f 3.3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =const 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fast diode d s l=100 h f 3.3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3.3 f v dd am01472v1 v (br)dss v dd v dd v d i dm i d am01473v1 v ds t on td on td off t off t f t r 90% 10% 10% 0 0 90% 90% 10% v gs
docid16556 rev 2 9/12 stf6n62k3(045y) package mechanical data 12 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
package mechanical data stf6n62k3(045y) 10/12 docid16556 rev 2 figure 20. to-220fp narrow leads drawing table 10. to-220fp narrow leads mechanical data dim. mm min. typ. max. a4.4 4.6 b2.5 2.7 d2.5 2.75 e0.45 0.7 f0.75 1 f1 0.95 1.20 g4.95 5.2 g1 2.4 2.7 h10 10.4 l2 15.20 15.60 l3 28.6 30.6 l4 10.3 11.1 l5 2.60 2.70 2.90 l6 15.8 16.0 16.2 l7 9 9.3 dia 3 3.2 8197858_rev_b
docid16556 rev 2 11/12 stf6n62k3(045y) revision history 12 5 revision history table 11. document revision history date revision changes 04-nov-2009 1 first release 19-sep-2014 2 ? modified: figure 14 , 15 , 16 , 17 ? minor text changes.
stf6n62k3(045y) 12/12 docid16556 rev 2 important notice ? please read carefully stmicroelectronics nv and its subsidiaries (?st?) reserve the right to make changes, corrections, enhancements, modifications, and improvements to st products and/or to this document at any time without notice. purchasers should obtain the latest relevant in formation on st products before placing orders. st products are sold pursuant to st?s terms and conditions of sale in place at the time of o rder acknowledgement. purchasers are solely responsible for the choice, selection, and use of st products and st assumes no liability for application assistance or the design of purchasers? products. no license, express or implied, to any intellectual property right is granted by st herein. resale of st products with provisions different from the information set forth herein shall void any warranty granted by st for such product. st and the st logo are trademarks of st. all other product or service names are the property of their respective owners. information in this document supersedes and replaces information previously supplied in any prior versions of this document. ? 2014 stmicroelectronics ? all rights reserved

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